Preparation And Properties Of Aluminum Nitride/Polyimide Nanocomposite Films With High Thermal Conductivity And Low Dielectric Permittivity

Nowadays, the micromation is mainly one of the development aspects of printed circuit board (PCB) and the package of electronic components. The polymer-based electronic package material has been proved to be promising for use in the package of electronic components. In the actual application of the electric and electronic domain, dielectric materials require not only low dielectric permittivity but also high thermal conductivity so that they can satisfy the increasing thermal diffusion of PCB and the package of electronic components .To improve the thermal conductivity of the polyimide (PI) films, aluminum nitride nanoparticle (n-AlN) with high thermal conductivity itself was dispersed into the PI by mechanical stirring and by ball-milling with planetary mill respectively.γ-aminopropyl triethoxysilane(KH550) was used as a coupling agent for encapsulating inorganic nanoparticles. TEM,SEM,thermal constants analyzer,impedance analyzer were used to characterize the microstructures and measure the thermal and dielectric properties of the achieved A1N/PI nanocomposite films. The results showed that the de-agglomeration of the encapsulating A1N nanoparticles was clearly observed by TEM. The thermal conductivity of the film increased to 0.35 W/ m·K in comparison with thermal conductivity pure PI of 0.16 W/ m·K , while still keeping a low dielectric permittivity(ε<4) prepared by ball-milling. It was obvious that the thermal and dielectric properties of films by ball-milling are better than those of by mechanical stirring. The material is hopefully used as novel PCB and package material of electronic components.