| Indium-tin oxide (ITO) thin film is an n-type semiconductor, owing to its high optical and thermal stability, it has attracted much attention in various electronic and optoelectronic devices.ITO films were prepared on normal glass substrate, the barrier SiO2 layer deposited glass substrate, and quartz glass substrate by sol-gel dip-coating technique with metal ingots indium and hydrated stannic chloride as the raw materials. The microstructure, surface depth profile analyses and phase of the films were analyzed by AES, AFM, TG-DTA and XRD. The sheet resistance and optical transmittance of the films were measured by using the four-point probe method and spectrophotometer. The effects of substrate materials, the amount of doped Sn, heat temperature, heat time and layers number on electrical and optical properties were also discussed. The sedimentation experiment and viscosity measurement inferred that the ITO precursor solution has high stability when the pH of indium tin oxide was 8, and the dosage of PEG was 1．5wt%. The TEM results showed ITO colloidal solutions have higher dispersibility with PEG and PVP than T-80．The results of resistivity and transmittance showed, ITO thin films deposited in quartz substrate have better photoelectric properties than that deposited in other glass substrate; With the amount of doped Sn increasing, the resistivity of ITO was up to minimum and then increased and showed minimum value (153Ω·(?)-1 ) around 10 wt. % Sn doping; The transmittance was up to maximum and then decreased and showed maximum value (96%) around 10 wt. % Sn doping; Depending on heat treatment temperature, heat treatment time and layers number, the ITO with better electrical and optical properties was prepared, and its resistivity and transmittance were 119Ω·(?)-1 and 96% respectively.
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