Praparation And Study On Ni-doping Properties Of V₂O₅ Ion Storage Films

Ion Storage layer (Counter Electrode) is the relatively pivotal materials in all-solid states electrochromic device. Its function is the storage and supply of the ion which the electrochromic needs, the maintenance electric charge balanced. Therefore it is requested to have bigger ion storage capability, better ion storage stability and cycle life, and smaller optics properties change when it electrochromics synchronously with the electrochromic material. Its properties directly affect on the whole device's cyclic durability and optical contrast.Vanadium pentoxide (V₂O₅) thin film, which is infirm cathode electrochromic, is one of good applied candidates of lithium ion storage materials in the Smart Window whose electrochromic layer is a-WO3. It has the semiconductor characteristic and the laminated structure and it is also advantageous to the ion transmission, and its chemistry properties is stable in the polymer electrolyte, has the bigger electric charge storage density, the optical properties doesn't obviously rely on the ion and the electron consistency which are poured into. But at present, if it truly to be applied in the practice, the ion storage capability of the thin film also must to be further improved, optimizing process parameters and reasonable doping are two effective ways which can improve its properties.The solid state V₂O₅ and V₂O₅ : Ni films were deposited on ITO glass substrates by RF reactive magnetron sputtering in the experiment, the ion storage and the sputtering doping mechanisms of the thin film were introduced in this article, and the films'structure, composition, optical and electrochemical properties were analyzed with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-visible recording spectrophotometer, and standard three-electrode. The effects of process parameters, such as oxygen content, sputtering power, sputtering temperature, and Ni-doping parameters on films'structure and properties were discussed.The research indicated that, V₂O₅ and V₂O₅ : Ni thin films deposited by RF reactive magnetron sputtering under the room temperature were amorphous, the few Ni-doping cannot change the film's crystalline state structure,they displayed good ion storage capability in the Li+ intercalation/extraction process; The lower oxygen component and the sputtering temperature enabled the films to have a better semiconductor characteristic and ion storage characteristic, enhances the sputtering power in a range, could effectively improve the film's ion storage capability and volt-ampere circulation characteristic; The amorphism of Ni-doping V₂O₅ film tended to be slightly stronger than the pure V₂O₅ film, this weak change of structure had caused V₂O₅ : Ni thin film to have better ion storage characteristic; It is rather complex to the effect of doping parameters on electrochemistry properties of V₂O₅ : Ni films, which is related to the doping mode and relative doping quantity. Even Ni-doping was helpful to improve the film's integrated properties when the relative doping quantity was in the range of effective doping and around optimized value, simultaneously the doping times also had a best value.