A Simulant Experiment Study Of The Silicon's Mechanism In The CMP

Chemical Mechanical Polishing is one of the most important and popular processes in the IC manufacture, and it also plays an important role in the finished products possibility,quality,performance and the usage life. Furthermore, it is also an important technology of the local and the whole in flatting surface. By the enlargement of the wafer and the larger integration of the IC, there are more and more needs about the CMP. However, the CMP is a typically wear chemical process, and there are tribology,mechanics,material and surface physics involved in its mechanism, so it is difficult to describe the mechanism in detail. Besides put forward a wear theory of single atom, the pad characteristics,particle characteristics and chemical characteristics are also comprehensive thought, and then the whole CMP model is made. The principle conclusions of the paper are:1. On the foundation of the theory analysis and the CMP experiments, the single particle's wear mechanism is proposed, and the nano-indentation experiments show the rationality of the theory; by the comparison of the AFM stimulant experiments and the theory's forecast, the adsorption rate is putted in order to make the model has more precision.2. On the comprehensive thought of the pad characteristics,particle characteristics and chemical characteristics, the whole CMP wear model is proposed, and the experiments of the CMP support the model are also described. The model can forecast the factors of applied force,velocity and particles, the Synergies of chemical and mechanical are also forecasted.