Studies On Hydrogen Retarding Property Of SiC-C Film

SiC has excellent radiation resistant and high heat exchange ability. Hydrogenand its isotope have low diffusion coefficient in SiC. So SiC have excellenthydrogen retention ability. There have been many studies on hydrogen retentiontheory of SiC-C films, but there are little study on process of preparing SiC-C films,and how to improve the hydrogen retention ability of SiC-C films. This paper isabout the process of preparing SiC-C films, and stability of hydrogen in SiC-C filmsduring thermal treatment.SiC-C films were deposited on the surface of stainless steel using ion beammixing. In order to eliminate argon, some of the samples were annealed (200℃/30min, 400℃/30min) before they were irradiated hydrogen ion beam. Afterhydrogen implantation, some of samples were heated to 300℃,600℃and 900℃for20 minutes, respectively to study the stability of hydrogen in SiC-C films.SIMS was used to study the depth distribution of H and to give the massspectra of positive species in the samples. IR was used to study the mechanism ofhydrogen retention in the SiC-C films. SEM was used to observe the surface ofSiC-C films before and after hydrogen implantation.The results show that:(1) Studies in the stability of hydrogen in SiC-C films indicates that afterheating at 300℃, hydrogen in the SiC-C films is stable; after heating at 600℃,the concentration of hydrogen in the SiC-C films is obviously decreased; after heating at 900℃, the SiC-C films loses the ability of containing hydrogen andhydrogen was totally escaped from the SiC-C films.(2) Annealing for deleting argon gas can improve the hydrogen resistantability of SiC-C films, hence, it let more hydrogen retarded in the SiC-C films.(3) Addition of Cu as a interlayer can enhance the bonding strengthbetween the SiC-C films and stainless steel.