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Basic Study Of Semiconductor Electromagnetic Shielding Films

Posted on:2008-09-23Degree:MasterType:Thesis
Country:ChinaCandidate:G YuFull Text:PDF
GTID:2121360242982931Subject:Materials science
Abstract/Summary:PDF Full Text Request
Transparent conductive film is a kind of important electromagnetic shielding and information anti-leakage materials deposited on display and other transparent materials which also required high mechanical robustness to meet the campaign environment. According to the test methods for electromagnetic shielding effectiveness, a finite element model was built to analyzed the electromagnetic shielding effectiveness and the usage of transparent conductive film. The conductivity mechanism of ITO film was analyzed. The results showed that as the substrate temperature below 150℃the carriers of ITO films are mainly oxygen vacancies, the carrier concentration decrease and the band gap shifts towards longer wavelength with the oxygen partial pressure increasing; When the oxygen partial pressure increase from 0 to 1%,the resistivity increase from 10-3Ω·cm to 4.4×10-2Ω·cm; For ITO films deposited at high substrate temperature and 1% oxygen partial pressure, the carrier was given by tin doping. With the carrier concentration increasing, the band gap shifts towards shorter wavelength with increasing temperature, the resistivity decrease to 2.4×10-4Ω·cm;It concluded that high electromagnetic shielding effectiveness and transparent ITO film can be obtain deposited under the condition of 1% oxygen partial pressure at 300℃.As for the characters of the ITO,SnO2:F films ,it is better for ITO film when the reflectivity of electromagnetic wave is up to 85% while SnO2:F film for 80%.The result lay a foundation for lower cost and mass production of the toughened safety electromagnetic shielding glass.
Keywords/Search Tags:ITO film, SnO2:F film, electromagnetic shielding, finite element method, carrier concentration, conductivity mechanism
PDF Full Text Request
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