Cu Film Stress Of Computer Simulation And Characterization

The thin film technology is playing a very important role in the modern high-tech field,and the development of a number of new materials and apparatus is on the base of thin film fabrication. Residual stress in thin films can cause severe problems for a number of applications in advanced technology; For instance, excessive residual stress can limit the reliability and function of thin films-based structures due to peeling, cracking and curling. So the control of the residual stress is veryc rucial in almost all coatings. But because of complicated growing process of thin film, there are some difficulties to study thin film growth with experimental methods and theoretical analyses. As a result, computer simulation techniques were developed to study the micro-growth of the thin film.The thesis first in understanding the theory of thin film growth on the basis of Kinetic Monte Carlo algorithm used to simulate the Cu film as an example of the thin film growth random process, molecular dynamics applied to the membrane stress in the course of proceedings, using OriginPro 7.5 software simulation of the films stress results of the visual display.A three -dimensional kinetic Monte Carlo technique has been developed for simulating growth of thin films firstly. And then ,the model involves incident atom attachments,diffusion of the atoms on the growing surface, and detachment of the atoms from thegrowing surface. The related effect by surface atom diffusion was taken into account. A significant improvement was made on calculation of the activation energy for atom diffusion based on a reasonable assumption of interaction potential between atoms. At the same time, it presents a program of films stress the computer approach. In isolation from the application of a complete system of atomic level, the concept of stress, the process of using film plane strain problems through of the "illusion of the" will of the film stress achieve procedures.In the basis of the above, we simulate the atomic incidence rate of basal temperature and film thickness of the thin film stress, as well as the impact of the incident atoms rate, substrate temperature and deposition of thin films atomic number of stress - the thickness of the impact. The main results we obtained are as following. 1) Atomic incidence rate and substrate temperature under certain conditions, with the deposition of atomic increase, the increase in film thickness, the film was gradually increasing stress the trend also found in the incidence rate of atoms under certain conditions, when the average thickness of thin films Films with the same stress as the substrate temperature was decreased instead of increasing trend;2) Atomic incidence rate in the film thickness and under certain conditions, with the substrate temperature increased, film stress was reduced trends; At the same time, in the basement when a certain temperature, the greater the rate of incidence of atomic films stress the greater the the substrate temperature increased, film stress was reduced trends; At the same time, in the basement when a certain temperature, the greater the rate of atoms incident, the greater the stress film;3) substrate temperature and film thickness with atomic under certain conditions, the rate of incidence increased, the stress was increased in the film, and also found that, in certain atomic incidence rate, the lower the film substrate temperature greater stress;4) In the basement of atomic incidence rate and temperature under certain conditions, thin film stress - and the thickness of sedimentary a linear relationship between the number of atoms at the same time, when deposited with the same atomic number, the lower the temperature of the basement membrane stress - the greater thickness;5) In the substrate temperature and whereabouts of a certain number of atoms, the film stress - with the thickness of atoms incident rate increases; At the same time, the incidence rate of certain atoms, the lower the temperature stress films - the greater thickness;6) atoms in the incidence rate and the whereabouts of a certain number of atoms, the film stress - with the thickness of the substrate temperature increase with decreasing; At the same time, in the basement under a certain temperature, the greater the rate of incidence of Atomic Films stress - were reduced thickness trends .