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Preparation And Photoluminescence Of β-Ga2O3 One Dimensional Nanomaterials

Posted on:2009-11-02Degree:MasterType:Thesis
Country:ChinaCandidate:H L MaFull Text:PDF
GTID:2121360245980974Subject:Condensed matter physics
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One dimensional nanomaterials has became the focus of the nanotechnology due to their super properties in the fundamental research and potential application in the nano-devices,photo-electricity apparatuses. Moreover, to control synthesis and manipulator of one-dimensional nanomaterials are the foundations to research on the one-dimensiona nanomaterials. So, in this page we synthesized Gallium-Oxide (β-Ga2O3) nanobelts by thermal- evaporation method and research their photoluminescence.1.We have synthesized different morphologies of the gallium oxide (Ga2O3) by directly heated metal gallium (Ga) under high temperature (1050℃). XRD and Raman characterized that the sample are monoclinic gallium oxide (β-Ga2O3), SEM observation showed that products contain nanobelts, nanowires, nano-grain, as to nanobelt that the width of 50nm while a few to tens of microns in length, and other gallium oxide scale is about 100nm.2.Analysis the influence of different parameters on the thermal evaporation CVD growthβ-Ga2O3 nanostructures, including evaporation temperature, growth time, gas flow, the distance between the source of evaporation and substrate, the catalyst and the catalyst particle size, found that the product is monoclinic structure of gallium oxide (β-Ga2O3) even if synthesized different parameters, we also found that that different parameters led to different shape of product and size. Finally, the growth mechanism and luminescent properties are different because of its unlikely experimental conditions. We also research on the growth mechanism ofβ-Ga2O3 nano-structures. The growth ofβ-Ga2O3 was controlled by both Vapor-Liquid-Solid (VLS) and Vapor-Solid (VS) mechanism while there growth by catalyst (Au). But if there didn't contain any catalysts its growth mechanism controlled by VS.3. Testing the photoluminescence at room temperature excited wavelength is 325nm and find the origin of the luminescence ofβ-Ga2O3 nano-structure, it emitted a strong green band in the center of 512nm. Research found that crystal defects have led to formation ofβ-Ga2O3 nano-structure green broad band emission peaks, crystal defects are likely attributable to the O vacancy and Ga-0 vacancies.
Keywords/Search Tags:One-Dimensional-Nanomaterial, Thermal-Evaporation, Chemical Vapor Deposition (CVD), Gallium-Oxide, Nanobelts, Growth-Mechanism, Photoluminescence
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