Preparation And Varistor Properties Of ZnO Film

Zinc oxide have six angular wurtzite's crystal structure which is a sort of a direct band-gap semiconductor material.The band gap width of Zinc oxide is 3.3eV in room temperature,and it's excition binding energy is as high as 60 meV.ZnO film have nice transparent electric conductivity,piezoelectricity,photoelectricity,gas-sensitive,varistor,and it is easy to realize integration with multi-semiconductor material.Therefore,there is wide application prospects to ZnO film in the region of optoelectronic device of panel display, the transparency electrode of solar battery,voltage-sensitive element,gas-sensor and so on..Owing to these outstanding property,ZnO film have comprehensive usage and many potential usage.In recent years,more and more researchers have pay attention to it,and it became a research hotspot in semiconductor region..This paper talks about the preparation of transparent zinc oxide film by sol-gel method.Gain different consistence collosol from two water zinc acetate alcoholysis,and make thin film at the different pulling speed,under different heat treat condition,then gain the preparation of dissimilar thickness film.It proves the film is surfaceing and obviously preferred orientation growth by SEM and X-ray diffraction test.And This paper discuss the influence of film thickness in different consistence,pull rate,pretreatment temper -ature,heat treatment temperature and so on..Adding aluminium salt to collosol to get the preparation of adulterant film,and do researching in respect of electricity characteristic towards it.By research,adulterated aluminous zinc oxide film's specific resistance obviously decrease,pure zinc oxide film hardly conduct electricity,but after adulterated aluminous,the carrier concentration of film is increased,filmy conduct electricity performance is largely increased too.This paper discuss that the influence of specific resistance by different volume of adulterating aluminum,film thickness as well as annealing temperature,and do Scanning Electron Microscope and X-ray diffraction testing towards the film.The result indicated the ZAO thin film is maintaining the ZnO hexagon spiauterite structure,indicates the Al atom to the Zn atom effective displacement,Carries on the observation surface using the scanning electron microscope to the sample to be relatively smooth,compactly,But still might see its surface to have not not regularly assumes the black hollow part,assumed the white with the bulge part the lining,Because Al³⁺ and the Zn²⁺ ionic radius is different,the vesicular structure which Al³⁺ replaces which Zn²⁺ to have the micro pore forms.Preparation bottom electrode in substrate by maguetron sputtering method, then,Preparation adulterate aluminum zinc oxide film in pole by sol-gel process method, and do voltage-sensitive testing towards it.by research,the varistor voltage is 7.3 V, non-linear factor is 7.9 and drain current is 21.3μA.