The Field Emission Property And Application Research On SiC Nanomaterials

In this paper ,four different morphology.SiC nanowires have been successfully synthesized by the chemical vapor reaction(CVR)and characterizated by the field emission scanning electron microscope(FE-SEM),transmission electron microscope (TEM) , selected area electron diffraction(SAED) , and X-ray diffraction(XRD).The field emission properties of the products,arbitrary distribution SiC nanowires purification process,and field emission display have been developed for specific research.The spinous SiC nanowires . whose tum-on and threshold voltage respectively is repectively 1.3V/μm and 4.2V/μm,has better field emission property than other three morphology products.While improving the vacuum degree.the tum—on and threshold voltage will be down.and the fomer decrease more qickly.In lOW electriC field strength,promoting the temperatures will improve turn-on voltage,howerver,the impact to the threshold voltage is not obvious in high electric field strength.High-temperature heat treatment and aciditication treatment were adopt to purificate the arbitrary distribution SiC nanowires . High-temperature heat treatment process:the heating temperature is 900 centidegree.and the time is 2 hours.Acidification treatment:Hydrofluoric acid concentration is 1.5mol/L.and the time is 4 hours.Atier purification.the product contained leSS impurities.and the field emission performance was also improved , but by internal factors such as morphology,its tum-on voltage and threshold voltage were not significantly reduced.The"QUST"typeface product was prepared derectly on the graphite sustrate by the template.After the electroluminescence performance test.SiC nanomaterials can meet the cathodic current density requirements of practical application of the process and it can be used to produce flat panel displays as cold cathode field emission materials.