Fabrication And Physical Investigation On P-Type Doping Of ZnO 1D Nanostructure And Homojunction Light Emitting Diodes

Semiconductor one-dimentional(1D) nanostructures have attracted much attention due to their novel properties.ZnO has a wide and direct band gap of 3.37 eV at room temperature with the large exciton binding energy(60 meV),which makes it promising application potential in optoelectronics.Based on the remarkable physical properties and the versatile applications of the ZnO material,ZnO 1D nanostructures have been extensively studied.According to the present research hotspots and difficulties on ZnO,we pay more attention to the ZnO 1D nanostructures,p-type ZnO 1D nanostructures,and ZnO homojunciton in this thesis.The optical and electrical properties of p-type ZnO 1D nanostructures,ZnO homojunction were researched.The details are as follows:(1) ZnO nanostructures been grown by using the hydrothermal technique.The samples were characterized by scanning electron microscope,X-ray diffraction.From PL spectra,the ZnO nanostructures have good optical properties.(2) Phosphorus doped ZnO nanorods were prepared by hydrothermal method technique. PL spectra suggests that the emission peaks at 3.310 and 3.241 eV can be attributed to a conduction band to the phosphorus-related acceptor transition and a donor to the acceptor pair transition,respectively.(3) On the base of p-type ZnO,the ZnO nanorods core/shell structure p-n homojunctions LEDs were prepared by surface-modification method.The LEDs can even emit intensive electroluminescence in blue-violet region at temperature 350 K.The blue-violet emission was attributed to the donor-acceptor pair recombination at the p-type layer of the LED.