| With the rapid development of integrated circuits, the Electronic Packaging Materials with high thermal conductivity(TC),low coefficients of thermal expansion(CTE),small density and low manufacturing cost were favored by the researchers. In recent years, SiCp/Cu composites were considered as a new generation of electronic packaging materials because of theoretically excellent properties.At present, the pressureless infiltration process has been used to prepare SiCp/Al extensively, but there were few reports on SiCp/Cu by pressureless infiltration. The bad wettability between Cu and SiC was the fundamental reason of getting SiCp/Cu composites. In this paper, three different manners of infiltration were taken in order to make the infiltration more easily, namely the infiltration of pure Cu to pure SiC perform,pure Cu to SiC perform with the addition of active elements and Cu alloys to pure SiC perform. The results of infiltration were analyzed and the infiltration mechanism was disscussed. The results show that:(1).With the optimization of SiC diameter,forming pressure, infiltration temperature and holding time and so on, the infiltration of pure Cu to pure SiC perform were received.(2).The improvement of infiltration was not achieved by the addition of Mg,Ni,Zn,Si to SiC perform. Some active elements led to the pulverization of SiC perform, and what worse the decomposition of SiC occurred.(3).The desirable infiltration was not come ture by adding alloying elements Mg,Ni,Zn,Si to Cu matrix, the weak infiltration was happened by Cu-Si alloy.(4).By contrasting, the better process parameters were 50um SiC, 3MPa forming pressure, thick foreshadowing powder,1400℃infiltrarion temperature,8h holding time, and a 1.95mm infiltrated layer was achieved.(5).According to the phase,surface topography and elements distributing annlysis of the interrelated sample, the infiltration mechanism was discussed, namely the infiltration process was driving by capillary force and negative pressure.
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