Growth Tm:YAP Crystals And Analysis Of The Defects

Tm:YAP crystal of b axis were grown by the Czochralski method in this study, Concentrated on the improvement of the all kinds of technics in growth process,and the dimension of the crystal isΦ(40～50) mm×(80～100) mm.However,some of boules contained defects such as split or cloudiness.The defects commonly contained in Tm:YAP crystals were discussed,the defects including crystal cleavage,color center and cloud layer were searched in detail,as a result, the instability temperature field induced crystal cleavage,color center were in contact with some factors such as misplaced ion or nonbalanced charge,cloud layer may not only contact with impurity and mixture ratio of material,but also contact with curvature of growth interface and temperature gradient.Through improvement of the temperature pattern,growth technics and analysis the changes of crystal absorption spectrum and colored,the high quality Tm:YAP have been gained.Growth feature and physical optics character of Tm:YAP single crystals were studied through stress analysis,transmission spectrum,sbsorption spectrum and He-Ne lamp and so on.Absorption spectrum was tested by a lambda 900 spectrophotometer.And the correlative parameters such as separation coefficient,concentration and absorption cross section were calculated.The obtained results are useful for analysis 2μm Tm:YAP crystal.