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Structure And Dielectric Properties Of Ln3Fe5O12 Ceramics

Posted on:2011-04-24Degree:MasterType:Thesis
Country:ChinaCandidate:L H TangFull Text:PDF
GTID:2121360302981325Subject:Materials science
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In the present work,dielectric properties and ferroelectric properties of Y3AlxFe5-xO12(x=2,3),Y1.5Bi1.5Fe5O12 and Sm3AlxFe5-xO12(x=0,0.1,2) ceramics were investigated.The effects of composition and site occupations on the dielectric properties and the physical nature of the dielectric relaxations were discussed.Two dielectric relaxations of Y3AlxFe5-xO12(X=2,3) ceramics were identified in the temperature range from 125 to 573 K and in the frequency range from 1 Hz to 10 MHz.A Debye-type dielectric relaxation at low temperatures can be attributed to the charge carriers hopping between Fe2+ and Fe3+.The number of charge carriers decreases and the hopping distance between Fe2+ and Fe3+ increases with increasing the amount of Al3+,which results in the increase of the activation energy.The conduction contributes to the high temperature dielectric relaxation which has the similar activation energy of that of conduction.The charge carriers hopping related dielectric relaxation was not observed because the low sintering temperature and evaporation of Bi3+ significantly suppress the formation of Fe2+.The middle temperature dielectric relaxation with an activation energy of 0.70 eV most likely arises from the inhomogeneous structure,such as grain boundaries.The higher temperature dielectric relaxation also originates from the conduction.The P-E loop of Y1.5Bi1.5Fe5O12 ceramics was observed at room temperature.The lone pair electrons may contribute to the ferroelectricity of Y1.5Bi1.5Fe5O12 ceramics.Three dielectric relaxations of Sm3Fe5O12 ceramics were observed in the temperature range from 125 to 573 K.The middle temperature dielectric relaxation and high temperature can be attributed to charge carriers hopping between Fe2+ and Fe3+ and conduction,respectively.Another dielectric relaxation at low temperatures with an activation energy of 0.22 eV is related to the 4f electrons of Sm3+.The increase of the amount of Al3+ weakens the low temperature dielectric relaxation.
Keywords/Search Tags:rare-earth garnet, dielectric relaxation, carrier hopping, site occupancy, ferroelectricity
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