| The Zn-or Ni-incorporated ferrite films with high resistivity and high permeability are widely used in micro-inductors, micro-transformers, magnetic recording and high frequency field. For example, if the electronic circuits are covered with the NiZn ferrite film, the magnetic films render additional resistance to the circuits, thus attenuating the conducted-electromagnetic noises. Fujiwara et al. found the Zn2+ions doped ferrite films have high real part (μ') and imaginary part(μ") of permeability in tens to hundreds MHz region. The films can be used as high-frequency magnetic film devices which are required for the current information technology infrastructure development. Because of the comprehensive application foreground of ZnxFe3-xO4 and NixFe3-xO4 ferrite films, it is of great significance to prepare and study them.Various preparation methods have been employed for preparing Znx\Fe3-xO4 and NixFe3-xO4ferrite films, such as liquid phase epitaxy, sputtering, plasma splay, and molecular beam epitaxy. In all these processes, post heat-treatments or high deposition temperatures (>600℃) are required to induce the desired crystalline phases. In addition, high vacuum and expensive equipment are also indispensable. However, the chemical methods offered a good alternative as it can overcome the drawbacks of the conventional methods. Therefore, by modifying Izaki's method, a convenient way was presented in this paper, in which Znxe3-xO4(0≤x≤0.99) and NixFe3-xrO4(0≤x≤0.33) ferrite films were prepared through adjusting the concentraction of Zn(NO3)2 in the DMAB-Fe(NO3)3-Zn(NO3)2 and Ni(NO3)2 in the DMAB-Fe(NO3)3-Ni(NO3)2 solutions at 80℃. The dependence of structure and magnetic properties of the ZnxFe3-xO4 and NixFe3-xO4 ferrite films were investigated by ICP-AES, XRD, SEM, Raman and VSM.(1) The ZnxFe3-xO4 ferrite films (0 |
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