| Titanium dioxide has been studied widely in many applications, such as fabrication of solar cells, photocatalytic properties of water and environmental pollutants, nuclear waste storage, oxygen sensor and dilute magnetic semiconductors. Because of its high dielectric constant and high refractive index, Titanium dioxide has becoming a promising material as optical film and protective coating. Especially,as the photocatalytic materials, titanium dioxide is safe, stable, non-toxicity, low cost and no secondary pollution. However, its wide band-gap energy means that only 5% of solar spectrum can be used. In recent years, it was reported that the doping method could improve the utilization rate of the sunlight.In this thesis, the rutile(R-TiO2) single crystal samples are modified by the advanced physical metal ion-implantation method with energetic transition metal ions Co+or Cu+. The energy, fluence of Co+is 40keV(1×1016ions/cm2),80keV(5×1015, 1×1016,5×1016,1×1017 ions/cm2),120keV(1×1016 ions/cm2). And the energy, fluence of Cu+is 70keV(4.6x1016,5×1015 ions/cm2). And then, all samples were characterized using X-ray photoelectron spectroscopy (XPS), X-ray powder diffraction (XRD), UV-Visible diffuse reflectance spectroscopy (UV-Vis DRS).On the other hand,we analyzed the structure, optical properties and the status of these impurity in rutile. At the same time, we also simulated the ion-implantation into rutile using SRIM2008. Such contents in this dissertation are as follows:1. The results from XPS show that there is metallic Co in doped-TiO2. In the doped-TiO2, the Co (413) nano-particles occur when the fluence of Co+is 5×1015ions/cm2 and 1×1016ions/cm2, and the CuO (022) phase occurs as the Cu+is implanted from the XRD.2. The absorption edge of all doped-rutile shows a small red-shift. The absorbance is enhanced in the ultraviolet and visible region. The absorption edge shows the red-shift is the greater as along with increasing of the fluence. Through analysis, we believe that much more Ti3+-Vo defects occur in the doped-TiO2. 3. The distribution of the implanted ions is simulated by TRIM program. Impurity concentration is very low near the surface of all sample. The peak of the concentration rise as the fluence is increase with the energy keeping constant. When the ion fluence is unchanged, the distribution of ion is broadened and the peak of the concentration down with rising of the energy.4. The lattice damage of rutile is simulated by TRIM program. There are many vacancies, interstitials and small rare replacements. The greater damage is caused by each ion, the greater the energy of incident ion is as along with the ion fluence being constant. When the energy keeps constant, the greater fluence is, the larger damage causes. The simulation and XRD analysis show that the structure of rutile single-crystal is perfect, even if the fluence is 1017ions/cm2. It indicates that rutile is a very anti-irradiation material.
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