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Preparation And Characterization Of InP Nanomaterials By Solvothermal Method

Posted on:2012-05-04Degree:MasterType:Thesis
Country:ChinaCandidate:G Y ZhaoFull Text:PDF
GTID:2131330332490483Subject:Materials Processing Engineering
Abstract/Summary:PDF Full Text Request
Semiconductor nano-materials have broad application prospects in a variety of optical, electrical, mechanical, and other functional devices in the future, because of their various quantum effects and unique natures. Indium phosphide (InP) is a direct band gap semiconductor material with a wide direct band gap of 1.35 eV and a large exciton Bohr radius (αB=14nm). Compared with Ge and Si materials, the InP compound semiconductors have many advantages:direct transition type band structure, high electro-optical conversion efficiency; high electron transfer rate, easy fabrication of semi-insulating material, applicability for making high-frequency microwave devices and circuits, high working temperature, strong anti-radiation capacity, high conversion efficiency as a solar cell materials and so on. At present, researches on preparation and property of InP nanomaterial is relatively less. Especially, there is less study on InP nanosphere and InP nanowires, and growth mechanism is not very clear.In this study, InP nanowires and InP nanospheres were prepared by a solvothermal method. The effect of reaction conditions on structure and properties of InP product were also investigated. The growths of InP nanowires and InP nanosoheres were analyzed, which provide a new theoretical foundation for the prepration and application of InP nanomaterial. Structure, morphology, composition, and optical properties of samples were tested by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and fluorescence. The results were summarized as follows:InP nanospheres were prepared by solvothermal method with InCl3·4H2O and P4 as raw materials, deionized water-ethanolamine as solvent. The molar ratio of InCl3·4H2O to P4, reaction temperature, reaction time, and solvents (diethanolamine and triethanolamine) were investigated with respect to their effect on the structure, morphology and property of InP nanospheres. The optimum reaction conditions were:Vwater:Vethanolamine=1:8; molar ratio of InCl3·4H2O to P4=1:5; 4mmol KBH4 reducing agent; reaction temperature: 180℃; reaction time:12h.Taking In and P4 as raw materials, deionized water-ethanolamine as solvent, InP nanospheres were prepared by solvothermal method. By screening the molar ratio of In to P4, volume ratio of deionized water to ethanolamine, and reaction temperature, the optimum conditions for growth of InP nanospheres were:Vwater:Vethanolamine=2:7; molar ratio of In to P4=1:7; 4 mmol KBH4 reducing agent; reaction temperature:170℃; reaction time:12h.Taking InCl3·4H2O and P4 as raw materials, KOH and NaOH as alkali solution, CTAB as surfactant, InP nanowires were prepared by solvothermal method. By screening the system temperature, reaction time, and alkali solution, the optimal reaction conditions for InP nanowires were:reaction temperature 180℃; reaction time 24h; KOH solution.
Keywords/Search Tags:Solvothermal, InP, Nanowires, Nanospheres
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