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Fabrication And Characterization Of CdSe Nanomaterials

Posted on:2012-01-15Degree:MasterType:Thesis
Country:ChinaCandidate:J LiFull Text:PDF
GTID:2131330332490748Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
Nanosemiconductor materials with quantum size effect, surface effect, and the dielectric limit effect, compared with other organic or inorganic materials they have unique structure, peculiar optical, electrical, magnetic and thermal properties, etc. These excellent properties closely related to the grain size of nanomaterial. Therefore, we can change the grain size by controlling synthesis conditions, then absorption and luminescence properties of the materials may red shift or blue shift corresponding to grain size.As direct band gap of II-VI clan semiconductor materials, CdSe has narrow emission spectrum and forbidden band width is 1.74 eV, which emission wavelength range can be adjusted by changing the size of nanocrystalline. Therefore, CdSe nanocrystalline can be applied to biomarkers fluorescence display field, the photoelectric devices, biological sensors, solar battery, light emitting diode, piezoelectric materials, laser materials etc.This paper give the preparation of anodic alumina oxide(AAO) template processes in details, and adopting two steps anodic oxidation method, combine mild anodization with hard anodization method, oxidation voltage are 40V and 100V respectively. The AAO template we get has highly ordered pore arrangement, high pore density. We also depart the AAO membrane from aluminum basement by adopting the inverse power method and can according to your need to get the AAO template breakthrough. SEM relults showed that it was about 100nm, combined mild anodization with hard anodization method can saved the reaction time and get the expect templates.CdSe nanocrystalline thin films have been fabricated on ITO glass substrate at room temperature by using an electrochemical method in a simple two-electrode system. Did the research on film morphology, crystal structure and optical properties deposited at different voltage. The samples were characterized with XRD, SEM, AFM, UV-VIS-NIR, and PL to investigate the morphology, crystalline structure, and optical properties of the films. Choose the best deposition voltage in this experiment system.Discussed the influence factors of the preparation of CdSe thin films, mainly including different Cd ion concentration and different Cd source, for generating film phase composition and the morphology of the films. Using the best preparation conditions in this experiment system to prepare CdSe thin film, and heat-treated the film in N2 atmosphere,350℃. Compared the difference between annealed and unannealed film,the results showed that annealing has a big influence in the quality of the films and a possible mechanism for the reaction is also discussed.Fabrication of CdSe nanometer materials using self-made AAO template, and two methods as solution with pressure and hydrothermal auxiliary AAO were applied. The samples were characterized with XRD and SEM, the results showed that the products are CdSe materials, but they are not in the pore of the templates. AAO templates are only played a basement role in the reaction. Whereas, the solution with pressure method has certain feasibility, which is valuable to deeply study.
Keywords/Search Tags:anodic aluminum oxide (AAO), mild anodization (MA), hard anodization (HA), electrochemical, CdSe thin film
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