| As the third generation semiconductor material, SiC has been widely researched in the fields of the electronic device, antifriction materials, nuclear materials etc due to its excellent performance, for example, physical properties , mechanical properties and so on. SiC/SiCf composites are the promising candidate of structural material for the fusion reactors.Annealing recovery stage is one of the important processes of defect production and evolution in neutron-irradiated materials. There are various physical property tests for investigating the stage including macroscopic length, lattice parameter, thermal expansion, electrical conductivity ,etc. Now, we intend to investigate neutron-induced damage recovery with XRD detection method.In this article, we elaborate the experience-related foundational knowledge and analyze in detail the various influence factors of the XRD detection method for damage annealing recovery in neutron-irradiated 6H-SiC crystal. The following results are obtained:(1).It is prerequisite that the X-ray diffractometer is set with the same instrument parameters on account of the profiles influenced severely by them.(2).In single crystal wafer, tilt angle can result in diffractometer detector lagging behind or leading the X-ray exit beam. This will influence the value of the Diffraction intensity and FWHM.In this situation, the directional detection method is adopted because it is convenient, rapid, economical and practical. Through the comparison among the experimental datas, the most perfect direction is the range where the maximum FWHM values approximately keep constant.
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