Study Of Prperty Characterizations For Si-based Strained Materials

This issue comes from the project"Research of the basic Technology of high speedintegrated devices of Si Based Strained materials"of Xidian university, which is theadvancing front of the research for this filed.Since the mid 1990s, most research results have showed that the strain brought intothe device reasonably can improve its property obviously; Si based strain technologyhas became the main one in the development of the microelectronics in the 21st century.The aim of this issue is study the methods of characterizations the Si based strainedmaterials accurately, so that we can characterize those materials'property scientifically.It is based on the traditional Si characterization technology in this work, combiningwith the Si-based stained materials'character,we study the stain, relaxation, Gecomposition, lattice constants, thickness, surface roughness, characteristics of defectsystematically. We also had done some experiments and analysis them.We use most of the optic characters of the Si-based stained materials when detectingit. so, it's necessary for us to understand the optic characters of the Si and SiGe firstly.In this part, we introduced the absorption coefficient and the reflection coefficient, afterthat, we can use those parameters easily.Based on the principle of Raman spectrum of testing, this work states the way ofcharacterizing the Si-based materials'stress, strain, Ge purity and so on. It is alsoanalyzed the relationship between strain-ε, the Ge purity x and the Raman shift-ωin thestrained and relaxed materials. Then, we tested and verified the results with the articlereported before,it is found that the results coincided very well.Based on the principle and trait of the HRXRD, this article states the ways andtechnology of characterization the lattice constant, Ge purity, stress, film thickness ofthe Si-based strained materials. We also do much experimental about the Si-basedstrained materials by HRXRD. After that, we analysis those results and compared themwith the results that calculated by Raman spectrum.Based on the testing principle of TEM, the article introduced how to observe thecross-section of the samples. Then, we contrast the results between the experimental andthe aim before the experimental. So we can use those parameters to guide theproduction. This article research the methods of how to characterization the defects byTEM. It is also introduced the way how to produce a satisfying sample for TEM to use. Lastly, we analyse the results.According to the testing principle of the AFM, this article studied the way andtechnology of the Si-based strained materials'surface roughness by AFM. We havedone some research on the Si-based strained materials'surface roughness and weanalysis those results. Based on the principle of the AFM, this article introduced a newway to characterize the defects by AFM. The other parts of the article introduced theRBS according to its principle. It is also introduced the way to calculate the Gecomponent and lattice constant.