| In recent years, due to the good piezoelectric, pyroelectric, ferroelectric properties, ferroelectric thin films were received extensive attention. Among all ferroelectric thin films, because PZT thin films have a high spontaneous polarization, relatively low dielectric loss and dielectric constant and PZT ferroelectric thin films near PZT(95/5) have rich phase changes, so they become one of the preferred films to make the uncooled infrared detector.In this thesis, the preparation process, micro-structure and electrical properties of Pb(Zr0.95Ti0.05)O3 film were studied from the experiments. The experiments used pulsed laser deposition(PLD), made the Si / YBCO / PZT thin films on Si films and also had rapid annealing to the thin films. By AFM, XRD analysis and the analysis of their electrical characteristics, the results showed that the films made had good ferroelectric and pyroelectric properties. What's more, through the comparison of parameters, the experiments obtained a number of process conditions of making thin films with good electrical characteristics and the influences to the characteristics of the films in different process conditions. The PZT thin films made under the optimized conditions had good pyroelectric properties. They can get average pyroelectric coefficient 2.5×10-8C/cm2·K,coercive field 20.1kV/cm,spontaneous polarization 115.569μC/cm2 and Remanent polarization 43.835μC/cm2 at 30℃—60℃.
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