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The In - Situ Photoluminescence Measurement Method Was Used To Study The Exciton Diffusion Process Of Organic Luminescent Materials

Posted on:2012-06-23Degree:MasterType:Thesis
Country:ChinaCandidate:J ZhuFull Text:PDF
GTID:2132330434472303Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
Because of its great potential application prospects, organic solar cell has been one of hot researches in the last10years. Although the research on organic solar cell has got great progress and the highest energy conversion efficiency of sample in laboratory has reached8.3%, there is still a large gap for the requirement to be industrialized, because of its two technical issues, low conversion efficient and poor stability. Meanwhile, people still can’t understand inherent physical processes and mechanisms of organic solar cell well, so the in-depth research on its physical processes and mechanisms is really important to solve the two key technical issues.This thesis mainly focused on the important physical process——exciton diffusion within organic semiconductor. The main research progresses are shown as follow:To the interface quenching, we study the exciton diffusion in Alq3film by situ photoluminescence measurement. In the research project, we used C6o and F4TCNQ as quenching materials. At the same time, we took two kinds of measurements by growing Alq3film on the quenching film and growing quenching film on Alq3film at room temperature and high vacuum conditions. In the two cases, we measured luminous intensity of Alq3film with the variation of its thickness and luminous intensity of Alq3film with variation of the thickness of quenching film covering Alq3film. Finally, we can obtain exciton diffusion length and the radius of Forster energy transfer between Alq3film and quenching film by theoretically fitting experimental curves.We also increased a layer of LiF as exciton blocking material above the quenching layer F4TCNQ and grow Alq3on LiF film. At the same time, we need measure the intensity of organic light-emitting film with variation of thickness. We can analyze the quenching phenomenon between Alq3and F4TCNQ by changing the thickness of LiF film.To the doping quenching, we also choose C60and F4TCNQ as quenching materials and doped quenching materials into Alq3with different ratio at room temperature and high vacuum conditions. Then, we measured the intensity with variation of Alq3film. At last, we can compare the quenching effect of C60and F4TCNQ to Alq3through experimental results.In addition, we compiled PID temperature control program by Labview to control high-precision programmable DC power and intelligent temperature control table.
Keywords/Search Tags:Organic Semiconductor, Exciton Diffusion, Situ Photoluminescence, Quenching, Temperature Control Program
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