Preparation, Microstructure And Properties Of Cu-MgF₂ Nanocrystalline Cermet Films

2u-MgF2 cermet films with different components were prepared by RF magnetron sputtering in order to ensure their chemical constitution. According to measuring different properties, various kinds of substrates were adopted and several thicknesses were deposited. For XRD, Ellipsometry examinations, single-side-polished Si(lll) wafers were used as substrates and for resistance measurement, glass was used and for infrared examination, double-side-polished Si(lll) wafers were used and for ultraviolet-visible spectrophotometry, double-side-polished quartz wafers were used and for TEM micrograph and electron diffraction pattern observation, Cu nets deposited by formvar film were used. The Cu-MgF2 cermet films were from 50 to 600nm thick. The optimum annealing temperature 350癈 and the best keeping warm duration 40 minutes were obtained by studying crossly the ED samples of Cu(vol20%)MgF2. The prepared Cu-MgF2 cermet films were all sintered under that condition. Cu(vol20%)MgF2 cermet film was also sputtered and measured and analyzed by XPS, the results showed that the volume fraction of Cu was 22.6%, which was very close to that of theoretical calculation and the longitudinal distribution of Cu component was even. The deposited Cu-MgF2 cermet films were analyzed by XRD, ED, TEM, IR, UV, Ellipsometry and temperature-varied four-wire technique. Microstructure analysis showed the films were made upof MgF, matrix with Cu nanoparticles embedded inside. The infrared results showedthat the IR characteristic value l080cm-lof cubic crystal SiO, and the absorptionpeak 460cm-l of MgF, caused by the interaction between F--Mg'+-P elastic vibrationand photon radiation, appeared in the IR spectra. Ellipsometric analysis showed thatthe typical absorption peaks 58lnm, 589nm and 606nm, resulting from the surfaceplasma resonance of Cu panicles and reflecting the absorption on composite filmsystem, aPpeared in the extinction coefficient k curves of Cu(voll5%)MgF,,Cu(vol20%)MgF, and Cu(vol30%)MgF, cermet films, respectively. With thecomPonent of Cu increasing, the peak site presented red shift, which was inaccordance to the results of ultraviolet-visible spectra. What's more, opticalconstants of Cu-MgF, cermet films were stlldied both theoretically andexperimentally. A reasonable agreemeflt was approached between the revised MGtheoretical and the experimental results. The electric research showed that thepercolation thIeshold qL should be between l5% and 20%. The electricconductivity of Cu(vol l0%)MgF, and Cu(vol l5%)MgF, was in the itate of dielectric,while that of Cu(vol20%)MgF, and Cu(vol30%)MgF, was in the state of metal.Duxing researching the preparation, microstructUre and photoelectTic propertiesof Cu-MgF, cermet films, the microstructure, optical and stress properties of Cufilms prepared by DC magnetron sputtering and MgF, by ar magnetron sputteringwere also studied.This paPer consisted of fOur chaPters. The first one was an introduction, whichsununarized the background and significance. The results of microsmicture, opticalconstams and stYess properties on different Cu and MgF, films were introduced inthe second and third one. While the fodri chaPter was the focal point, in which thepreparation, microstructure and photoelectric properties of Cu-MgF, cermet filmswere discussed in detail.