Preparation And Characterization Of PZT Thin Film

In recent years, lead zirconium ti tanate Pb ( ZrxTii-? On, (PZT(x/l-.x)) ferroelectric thin films have been extensively applied to many high- tech fields because of their excellent ferroelectric properties such as high dielectric constant, low dissipation factor, nonvolatility and so on. Among various fabrication techniques of thin film, the sol-gel process has gained much interest for the preparation of PZT thin film, due to ihe advantages of good homogeneity, easy control of composition, low In-ill i reaving temperature, easy formation of large area thin filmsPb ( ZrxTi:-K) 0:, (PZT) films were prepared on the ITO coated glass plates and low resistor silicon wafer in Sol-Gel dip-coating process associated wi di heat treatment: at different temperatures and characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM).lt is shown that the PZT ferroelectric thin films with (110) preferred orientation and well-crystallized perovskite structure can be obtained after annealing at 680癈 for 30 minutes on ITO substrate and at 800 "C for lornin on silicon substrate. The P-E hysteresis loops were measured by means of: the Sawyer-Tower test system with a compensation resistor at room temperature. Values of the remanent polarization (P:) and the coercive electric field (E:) are 19.36 u C/cm" and 95 kV/'cm, respeclively, for' the measured PZT thin films prepared on ITO substrates. The relative dielectric constant e , and the dissipation factor tgS of the PZT thin films were measured in a LCR meter to be 639 and 0. 23, respectively. But the values of the remanent polarization (P,) and the coercive electric field (?) of thin film manufactured on silicon& -$-51 i *. f -Sfi tb f -fi-teXare 47. 7 M C/cm'1 and 18 kV/cm, respectively. The relative dielectric constant e r=158and the dissipation factor tg6=0. 04-0. 05.