The Study Of RTCVD Equipment And Growth Process That Suitable For The Growth Of SiC Thin Film

In this thesis, the RTCVD equipment that suitable for the growth of SiC thin film was studied, and the SiC thin film growth process was primarily explored.We primarily do theses works:First, for the RTCVD equipment that we required has a big chamber, high working temperature and fast temperature ramp rate, the energy that required for the high temperature working conditions was computed; then the reflector material and the shape of the reflector were chosen. Through computer simulation we designed a reflector that can reflect the energy of each lamp individually through each half-cylindrical-face. Through experiments, the susceptor can be heated to a high temperature of 1200癈 within 1 minute by 14 W-halogen lamps of 2000W each at last.Second, on account of the block of gas channel we designed a gas channel system, through which the hydrogen can flush the gas channel after the reaction by the control of valves.Third, we designed a waste gas disposing equipment, through which the danger gases such as SiH4 can be get rid of by the nitrogen diluting and the rinsing of alkali solution.Forth, the growth process of SiC thin film was primarily explored by using of RTCVD equipment.