Research On Sintering And Dielectric Properties Of Copper Titanium Oxide

In this work, the polycrystalline samples of CCTO compounds were prepared by a high temperature solid-state reaction technique. By the XRD we find the increase of the calcination time or temperature and milling between calcination lead to the formation of CCTO. So we calcine ceramic at 800℃ and 1000℃and mill between calcinations.We also find that sintering temperature affect the dielectric constant and loss.In the CaCu3(1+x)Ti4O12 ceramic, When the sintering temperature is 1080℃ and the replacement of Cu2+ ion is 0.08mol, the dielectric properties are best and the loss is. only 5-6%.Adding A+ ion to the AxCa(1-x)Cu3Ti4O12(A=Na+,K+) ceramic makes the sintering temperature rise, and its dielectric constant rises to some extent, loss becomes smaller, and this also makes the capacity variance ratio enlarged. At the same time the dielectric properties becomes wrong in the regulation temperature scope. In the LaxCa(1-x)Cu3Ti4O12 ceramic, the loss is higher but the change of dielectric properties decrease in the regulation temperature scope.In the CaCu3Ti4(1-x)Co4xO12 ceramic, the dielectric constant and loss is very high;but in the CaCu3Ti4(1-x)Nb4xO12 ceramic, the dielectric constant and loss is very low however the loss is 10%.In the NaxCa(1-xCu)3.08Ti4O12 ceramic, the dielectric constant is about 20000 and the loss is 5-6%. The dielectric properties are better to that of the NaxCa(1-x)Cu3Ti4O12 ceramic.At the end we use ANN to model the correlation between processing parameters and dielectric properties.