Research On Product Of Porous Al₂O₃ Ceramic Film By Anodic Oxidation

A new technology for producing porous aluminum ceramic films was researched in this paper. A hard anodic oxidation equipment was completely designed and got porous aluminum ceramic films on the surface of aluminum alloy.The basic quality of aluminum and normal method of prepared porous aluminum ceramic films were introduced. Method of prepared porous aluminum ceramic films and the reason of choose was point out in this research. The goal and contents about research was proposed.Technology for preparing porous aluminum ceramic films was introduced. Surface quality, porosity ratio, degree of hardness and performance of ceramic films effected by oxidation time, oxidation voltage, current density, component of oxidation liquid ,plug treating and other technology parameter were researched and analysis, relevant conclusion was got from it. Composition and micrograph of ceramic films were detected and observed by SEM, morphology and construct of ceramic was characterized. A new mechanics for prepared porous aluminum ceramic films using hard anodize oxidation conclude based on research result and analysis progress of prepared porous aluminum ceramic films.Type of WD20-500Impulse and Constant current electric supply by self-control was designed. The improved cooling equipment using compound cooling condition between inside and outside of the eddy spinner increased the cooling efficiency and avoided ablation and chalked generate by local focus of quantity of heat, prepared a high quality aluminum ceramic film. The ratio of production and accurate of experiment data were improved by designed a voltage acquisition software for hard anodize oxidation. The wearing resistances and degree of hardness performance of ceramic films was improved by using nano-sealant penetrated into the porous prevent the outside contact with the aluminum basement.Through apply on eddy spinner, a ceramic film with uniform porous distribution, degree of hardness greater than 3225N·mm^-2, thickness of 30um was prepared on the surface. The ratio of forming film was reach to 1.64 um per minute, the best technology parameter is : sulfuric acid density at 200 gramme per liter, oxalic acid add malic acid 10 to 30 gramme per liter, current density at 3 to 5 A per dm², oxidation temperature at 5℃, impulse periodic at 5 second, oxidation time at 20 minute.