In order to break through the macroscopically physical limitation of the traditional mechanical-electrical effect,the design of new nano-electromachannical devices based on the new theory and effect with higher sensitivity, lower power must be developed. This paper mainly research the test method of the output characteristic of AlAs/GaAs double-barrier nano-quantum well film micro-structure based on resonant tunneling effect, design circuit to extract the small signal of the resonant tunneling micro-structure induced by mechanical signal, and test the electromechanical character of micro-structure and accelerometer based on micro-structure through a lot of experiments.This paper research the basic characteristic of resonant tunneling micro-structure, which containing"plateau-like"structure, intrinsic bistability, oscillation characteristic and charge accumulation effect, then present the electric equivalent model of micro-structure, design resonant tunneling oscillator, and develop the circuit testing oscillation frequency. After analyzing the effect by oscillation and serial resistance, develop the resonant tunneling micro-structure matching bridge testing circuit. Design the peak and valley value testing circuit based on the principle of the peak and valley value of I-V characteristic of micro-structure migrate because of charge accumulation change induced by stress, and obtain the result through experiments.In experiment this paper tests the piezo-resistive characteristic of negative differential resistance region and non- negative differential resistance region of micro-structure, justifies resonant tunneling electromechanical coupling effect, and tests the output signal of resonant tunneling accelerometer by vibration machine. The result of more than one order higher piezo-resistive sensitivity than that of silicon is demonstrated through dynamic response. The oscillation frequency change induced by stress of resonant tunneling microstructure and the temperature effect have been tested. Furthermore, the impulse response of resonant tunneling accelerometer was tested through drop hammer experiment, and the shock response spectrum was analyzed.The research of this paper justifies the electromechanical coupling effect of resonant tunneling micro-structure, validates the design concept and mechanical-electro conversion mechanism of resonant tunneling accelerometer, and provides experimental foundation for new high sensitivity nano-electromechanical transducer and high range accelerometer. |