Bending Stress Analysis Of Silicon Solar Cells

Solar cells are devices that translate light energy to electronic energy by using the photoelectric effect or photochemistry effect. According to different material used, solar cell can be divided into silicon solar battery, multi-compound pellicle solar battery, polymer multilayer decorated pole solar battery and nanometer crystal solar battery. And silicon solar battery is the best developed ones which dominates in applying. Current methodology is to erode silicon surface to pyramid particles, which then can reflect light twice and improve absorption rate. However, this methodology may produce high stress while the silicon cells is suffering banding moment, which may be destructive in high precise and light weight required situations such satellite. Traditional optic methods for measuring stress may have limitation. We study the bending stress of monocrystalline silicon solar cells.In this paper, we study monocrystalline silicon solar cells which have pyramid particles on (100) plane of crystal by alkaline solution. We use circle transition between pyramids, and analyze variation of banding stress under identical banding moment, while height ratio of pyramid and silicon board, and circle transition radius is changing. Due to specialization of pyramid volume, we use equivalent height, which is 1/3 height of pyramid plus board height, to ensure volume invariant. Banding moment is realized by uniformly localized load. In this paper, we first study the effect of height ratio and circle transition radius to banding stress in 2D case. And conclude experiential formula with parameter of height ratio and radius. Then we do similar research in 3D case. We find the results between 2D and 3D cases have a nearly constant ratio. Therefore, we can modify experiential formula in consideration of 3D results.