| Energy crisis and environmental pollution have becom the principal matter to the modern world economy development, the solar enery can be seen as inexhaustible in supply and always available for use, compared with fossil fuel, solar enery has the special advantages with clean and renewable. The solar cell has become the focous for its ability to convert light into electrocity. CuInSez(CIS) is a kind of direct band gap semiconductor material, its absorption coefficient reached 105, is the highist in semiconductor materials, and its photoelectric conversion efficiency is high too, which make CIS thin film solar cell the focus in potovoltaic fields.CIS polycrystalline thin films,ie. selenylation is done for the Cu-In multilayer deposited on glass substrate via vacuum evaporation process, ZnS thin film is prepared by Chemical Bath Deposition (CBD) , used ZnSO4·7H2O and CS(NH2)2 as raw material and NH3·H2O as complexing agent. SEM, XRD, Four Point probe resistance instrument and spectrophotometer are use to determine the performance of these thin films.The resistivity of CIS thin films ranged from 3.68×10-4Ω·cm to 1.89Ω·cm, when the proportion of Cu,In,Se is at 1:1:2, its resistivity is aboutΩ·cm magnitude. The resistivity of ZnS thin films is larger than 1kΩ·cm, this meet the demond of manufacturing solar cell. The XRD analysis show: single phase CIS polycrystalline thin films could be prepared if the composition is about stoichiometric ratio, ZnS thin films had a structure of armphous or microcrystalline. SEM morphology observation showed: the morphology of CIS thin films is different as the composition changed, the morphology of ZnS thin films had a shape of ball, and its grains are fine. The transmittance of CIS thin films in visble spectrual is lower than 5%, and that of ZnS is higher than 80%. All the excellent performance showed they are promising material in solar-cell-manufature.
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