Study On The Micro-Infrared Radiation Of Defects In CMOS

With the continuous scaling down of the CMOS IC, failure isolation technology, as an important part of failure analysis technology, has to change to meet the challenge. It is impossible to precisely identify the failure location in the much larger IC area. However, the failure location can be quickly and precisely isolated by means of the micro-infrared radiation of defects in CMOS. This study aims to the micro-infrared radiation in CMOS, including the micro-infrared radiation of defects such as the breakdown of ESD protection circuit, latchup and contact spiking. Meanwhile, some case studies of failure analysis are conducted and the root cause and the mechanism of the micro-infrared radiation of defects are found from the aspect of circuit design, layout design and the process. In the experiment, Photon Emission Microscopy (PEM) is used to isolate the failure location. Back-side Observation Mode of PEM and the factor that will affect the results of Back-side Observation are also studied...