Preparation And Characteristic Study Of The Intrinsical Layer Of Nc-Si: H Film Solar Cell

For its good optical-electronic properties,nano-crystalline silicon film has become the research hit of today's P-V solar technology since the third generation of nano-crystalline film solar cell comes out. Nano-crystalline silicon material have not only a good photosensitive properties but also a high ratio of photo/dark conductance. Compared with amorphous silicon, the photoconduction of nc-Si:H has a less attenuation under long-time illumination. Further more, we could control the optical band gap through changing the grain size and crystalline volume fraction for the quanta dimension effect.This Paper studied the process for nano-crystalline silicon film preparation by RF sputtering method. First, high quality nc-Si:H film was deposited respectively on glass and silicon substrate, and then the quantum characteristic, optical-electronic properties and the conductive mechanism of nc-Si:H were analyzed theoretically. Meanwhile, we used XRD, SEM, Fourier infrared absorption spectrum and ultraviolet absorption spectrum methods to observe and analyze the micro-appearance, the Si-H bond, and the optical band-gap of samples; finally, we summarized the influence of the experiment parameters ( such as the substrate temperature, gas pressure, hydrogen proportion) on the properties of the thin film. Through those above works, we got an optimized Parameters for the RF sputtering process for nano-crystalline silicon film preparation.This will be a good foundation for the following fabrication and research of nano-crystalline silicon film solar cell.Compared with other traditional processes (such as PECVD), the RF sputtering method successfully avoids the annealing and inducement crystallization process, and also largely simplified the process. Furthermore, its low deposition temperature makes the nano-crystalline silicon thin film adaptable to be deposited on glass, plastic and other flexible substrates, which will certainly promote the development of nano-crystalline silicon thin film cells.