Study Of Power MOSFET Application In The High-power Electronic Switch

At present, large-scale pre-baked aluminum reduction cell is the major equipment in the process of electrolytic production in domestic and foreign. To stop and opened it through the implementation of artificial means. Under full current conditions, the key of electrolyzer to stop or opened is short-circuit block to safety closure and opening. To safety open or closed short-circuit block, the premise that the current transfer of energy will be smaller. It is proposed to use the new technology of the high-power electronic switch combine with the mechanical switch to achieve high current sub-current in this paper. High-power electronic switch is to achieve the voltage of mechanical switch with the electronic switch in parallel from about 4V down to less than 1V in full current conditions, so that the closed or disconnected of mechanical switch will not have a serious brand phenomenon, in order to ensure mechanical switch safety closed or open. By the cooperation of mechanical switch and high-power electronic switch achieves the aluminum reduction cell to stop and opened operation in security under full current conditions.In accordance with the requirements of practical application, select the IXYS Corporation VMO 1200-01F power MOSFET as a design basic of high-power electronic switch in this paper. Analyzer of basic working principle, main parameters and the basic characteristics of the power MOSFET, study of the mathematical models of main parameters and the relationship between of main parameters, for it in the actual application has laid a theoretical foundation.This article tested some the main parameters and the characteristics curve of the VMO 1200-01F, and studied its variation. The turn-on characteristic of a power MOSFET as a basic, also studied the current distribution and voltage drop characteristics when a single, two and four parallel VMO 1200-01F under certain conditions. Thus obtained through appropriate increase in the number of parallel power MOSFET is able to the specific purpose of reducing voltage. In addition, simulation of an electronic switch to drop voltage characteristics, proved to achieve the voltage at both ends of mechanical switches down to 1V below by the appropriate increase in the number of parallel power MOSFET.Experiments show that the most important thing is to achieve uniform current distribution in a number of parallel power MOSFET. We have studied the current distribution balance characteristics of the two parallel power MOSFET using PSpice simulation software. So as to under a specific single-pulse voltage condition, there are four parameters to have a greater influence on the uniform current characteristics of parallel power MOSFET.Based on the studies of turn-on characteristics of a single power MOSFET, the current distribution and voltage drop characteristics at a number of parallel power MOSFET and the simulate analysis of two parallel, designed a high-power electronic switch. It consists of 60 parallel VMO 1200-01F components. It can make the voltage of the mechanical switch in parallel with high-power electronic switch down to less than 1V in theory, and we set up the experimental platform for DC20kA in the laboratory.