Study Of A-SiC:H Thin Film As Window Layer For The Solar Cell

Solar energy is an inexhaustible,renewable and clean source of energy. as one of the most impotant way to use solar energy,R&D of the solar cells is increasingly significant.PIN amorphous silicon thin film solar cell have many advantages:1,low-cost of the substrate and preparation materials make it more economic.2,It has high light absorption and high efficiency.3,The product widely used and it is easy to achieve integration. These advantage make PIN amorphous silicon thin film solar cell the most promising solar energy battery in the 21st century. As a thin film solar cell window material, P layer of material is the most important, it requires not only high electrical conductivity, but also high light transmittance, and film thickness must be about 20-100nm. In this paper,PIN P layer of thin film solar cell has been studied from the theoretical and experimental aspects.We deposited a-SiC:H films using Three-continuous PECVD system through RF-PECVD method and different amounts of boron doped a-SiC:H films on 7059 glass. And the impact of their growth areas such as:substrate temperature,growth chamber pressure,discharge power,film doping concentration on growth rate,optical band gap,conductivity,etc,have been studied,so as to find the most suitable for thin film growth process optimization.Finally,We have come to the conclusion that a-SiC:H films,with 3.21ev optical band gap and 4.5 X 10-7S/cm conductivity,could be got when the deposition technology is as follows:24w discharge power,74Pa growth chamber pressure,132℃substrate temperature,5% Intrinsic SiC concentration,80sccm gas flow rate,10min growth time,1% boron-doped.