| In recent years, Cu(In,Ga)Se2(CIGS) thin film solar cell is took much attention with its higher conversion efficiency and much more stable performance. As its production is becoming industrialized, how to reduce costs is critical. Because electrodepisition process does not need equipment which should be very expensive and is easy to grasp. It is also fits for growing thin films with large-scale. Thus, Electrodepisition is more suitable for industrial production.In this paper, CIGS precursors were fabricated by one-step electrodepisition on Mo/glass. The solution contained CuCl2, InCl3, GaCl3 and H2SeO3. CIGS precursors were selenized in Se vapor to improve their crystallization performance. The films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray fluorescence spectrometer (XRF).Cu-poor CIGS precursors which were closed to the ideal stoichiometric composition were prepared with porous, crack surface and poor crystallinity. The precursors were selenized in Se vapor, which improved crystalline performance of the films, but resulted in cracking of the films. Using this technology, the solar cell with efficiency of 0.64% was prepared. The film's crystallinity was further improved and no cracks appeared after rapid heating. The solar cell with efficiency of 2.39% was prepared.Cu-rich precursors were close to the ideal stoichiometric composition. The CuxSe large particle phase appeared in the surface of films after selenization. With the Cu/(In+Ga) ratio increased, CuxSe content increased, which can effectively suppress the emergence of crack. CuxSe phase could not improved crystalline performance of the films.Cu-rich precursors were deposited a littlie In,Ga after selenization to get films having Cu-poor composition and no cracks appeared when the ratio of Cu/(In+Ga) was high. The solar cell with efficiency of 5.96% was prepared. When the evaporation prior to selenization , the solar cell with efficiency of 7.27% was prepared.
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