The Research Of Ni-SALICIDE Process For The Application To Deep Sub-micron CMOS Devices

In this paper, Ni-SALICIDE process has been investigated intensively for the application to deep sub-micron COMS devices. With the size of devices scaling, Ni-salicide is more suitable for CMOS devices than Ti-salicide or Co-salicide by improving salicide process. Adopting Ni/Si and TiN/Ni/Si structure , the NiSi film on the <100> Si substrate by the means of RTA has been demonstrated in detail. The heat-reaction characteristics of Ni/Si and TiN/Ni/Si structure and the regularity for forming the NiSi film have been studied deeply and formed the excellent Ni-salicide shallow junction diode. We analyzed the mechanism of the reverse leakage current for Ni-salicide shallow junction and studied the effect of the different process condition on the reverse leakage current. Under the optimum condition, the value of the reverse leakage current density of Ni-Salicide shallow junction with junction depth of 110nm for N+P is 4.5E-8A/cm2 (V=5v). As a result, the technology is suitable for very or ultra deep sub-micron CMOS VLSI and even nonameter devices by improving NiSi salicide process.