Study Of CVD Growth Kinetics Model For Silicon-based Strained & Relaxed Materials

Posted on:2012-12-04

Degree:Master

Type:Thesis

Country:China

Candidate:G Q Jin

Full Text:PDF

GTID:2178330332488497

Subject:Microelectronics and Solid State Electronics

Abstract/Summary:

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SiGe/Siheterostructurematerialhasbeenusedwidelynowadays,andgoodqualitySiGefilmshavebeenthebasisforitsapplication.Atpresent,thegrowthofSiGefilmsincludeavarietyofways,whileCVDmethodisthemostpopular.SiGefilmgrowthprocessisverycomplex,andanumberoffactorsrelated,suchastemperature,pressure,gassupply,gasflow,manyresearchershavestudiedonthegrowthprocessandgrowthkineticsandachievedlotsofresults.Thispaperdescribedthethegrowthmechanismofsilicon-basedstrainedandrelaxedmaterials,growthmethods,growthkinetics.GrowthtechniquesusedRPCVD,usinggassourceforSiH₄,SiH₂Cl₂,GeH₄andH₂.Growthtemperatureswere625℃,900℃,gasflowandtemperaturechangesthroughtogetadifferentdepositionrate.AccordingtoGrovetheoryandFick'sfirstlaw,thispaperfirstlyproposedandestablishedaRPCVDgrowthkineticsmodelforsilicon-basedstrainedandrelaxedthinfilm.DiffirentfromthepreviousSiGe/Siheterostructuregrowthkineticsmodelwhichonlyconsideredthesurfacereactioncontrol,thepaperalsoconsideredbothsurfacereactionsandgastransmissioncontrolmechanism,thenkineticsmodelsaregivenunderthetwolimitsituationfortwocontrolmechanisms.themodelappliesnotonlytolow-temperatureSiGe/Siheterostructuregrowthofstraincharacterization,butalsoforcharacterizationofhigh-temperatureSiGe/Siheterostructurestrained&relaxedheterostructurematerialdeposition.Finally,thecalculatedvalueswerecomparedwiththeexperimentalvalues,eitherlowtemperature(625℃)orhightemperature(900℃),theyareingoodagreementwiththeexperimentaldata.Themodelstructureissimpleandclearinphysicalmeaning,canbeapplicablefordifferentgassupplysystemforhightemperatureandlowtemperaturesilicon-basedstrainedandrelaxedSiGematerialgrowthkineticsbyRPCVD.

Keywords/Search Tags:

strained and relaxed SiGe, growth kinetics, deposite rate, Grovetheory

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