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Study Of CVD Growth Kinetics Model For Silicon-based Strained & Relaxed Materials

Posted on:2012-12-04Degree:MasterType:Thesis
Country:ChinaCandidate:G Q JinFull Text:PDF
GTID:2178330332488497Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
SiGe/Siheterostructurematerialhasbeenusedwidelynowadays,andgoodqualitySiGefilmshavebeenthebasisforitsapplication.Atpresent,thegrowthofSiGefilmsincludeavarietyofways,whileCVDmethodisthemostpopular.SiGefilmgrowthprocessisverycomplex,andanumberoffactorsrelated,suchastemperature,pressure,gassupply,gasflow,manyresearchershavestudiedonthegrowthprocessandgrowthkineticsandachievedlotsofresults.Thispaperdescribedthethegrowthmechanismofsilicon-basedstrainedandrelaxedmaterials,growthmethods,growthkinetics.GrowthtechniquesusedRPCVD,usinggassourceforSiH4,SiH2Cl2,GeH4andH2.Growthtemperatureswere625℃,900℃,gasflowandtemperaturechangesthroughtogetadifferentdepositionrate.AccordingtoGrovetheoryandFick'sfirstlaw,thispaperfirstlyproposedandestablishedaRPCVDgrowthkineticsmodelforsilicon-basedstrainedandrelaxedthinfilm.DiffirentfromthepreviousSiGe/Siheterostructuregrowthkineticsmodelwhichonlyconsideredthesurfacereactioncontrol,thepaperalsoconsideredbothsurfacereactionsandgastransmissioncontrolmechanism,thenkineticsmodelsaregivenunderthetwolimitsituationfortwocontrolmechanisms.themodelappliesnotonlytolow-temperatureSiGe/Siheterostructuregrowthofstraincharacterization,butalsoforcharacterizationofhigh-temperatureSiGe/Siheterostructurestrained&relaxedheterostructurematerialdeposition.Finally,thecalculatedvalueswerecomparedwiththeexperimentalvalues,eitherlowtemperature(625℃)orhightemperature(900℃),theyareingoodagreementwiththeexperimentaldata.Themodelstructureissimpleandclearinphysicalmeaning,canbeapplicablefordifferentgassupplysystemforhightemperatureandlowtemperaturesilicon-basedstrainedandrelaxedSiGematerialgrowthkineticsbyRPCVD.
Keywords/Search Tags:strained and relaxed SiGe, growth kinetics, deposite rate, Grovetheory
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