SiGe/Siheterostructurematerialhasbeenusedwidelynowadays,andgoodqualitySiGefilmshavebeenthebasisforitsapplication.Atpresent,thegrowthofSiGefilmsincludeavarietyofways,whileCVDmethodisthemostpopular.SiGefilmgrowthprocessisverycomplex,andanumberoffactorsrelated,suchastemperature,pressure,gassupply,gasflow,manyresearchershavestudiedonthegrowthprocessandgrowthkineticsandachievedlotsofresults.Thispaperdescribedthethegrowthmechanismofsilicon-basedstrainedandrelaxedmaterials,growthmethods,growthkinetics.GrowthtechniquesusedRPCVD,usinggassourceforSiH4,SiH2Cl2,GeH4andH2.Growthtemperatureswere625℃,900℃,gasflowandtemperaturechangesthroughtogetadifferentdepositionrate.AccordingtoGrovetheoryandFick'sfirstlaw,thispaperfirstlyproposedandestablishedaRPCVDgrowthkineticsmodelforsilicon-basedstrainedandrelaxedthinfilm.DiffirentfromthepreviousSiGe/Siheterostructuregrowthkineticsmodelwhichonlyconsideredthesurfacereactioncontrol,thepaperalsoconsideredbothsurfacereactionsandgastransmissioncontrolmechanism,thenkineticsmodelsaregivenunderthetwolimitsituationfortwocontrolmechanisms.themodelappliesnotonlytolow-temperatureSiGe/Siheterostructuregrowthofstraincharacterization,butalsoforcharacterizationofhigh-temperatureSiGe/Siheterostructurestrained&relaxedheterostructurematerialdeposition.Finally,thecalculatedvalueswerecomparedwiththeexperimentalvalues,eitherlowtemperature(625℃)orhightemperature(900℃),theyareingoodagreementwiththeexperimentaldata.Themodelstructureissimpleandclearinphysicalmeaning,canbeapplicablefordifferentgassupplysystemforhightemperatureandlowtemperaturesilicon-basedstrainedandrelaxedSiGematerialgrowthkineticsbyRPCVD. |