Study On The Single Event Upset Effect Of MOS Devices

As the integration density increases rapidly with the shrink of the MOSFET dimension, the single event upset (SEU) effect caused by radiation particles under radiation environment becomes more and more significant. Research on SEU of semiconductor devices and methods to improve the capability to resist it, has been one of the most important topic in microelectronics field.Radiation environment and SEU mechanism have been introduced firstly, followed by the quantitative characterization of injection particles, charge deposition patterns and SEU in semiconductor. This paper proposes a method to analyze SEU in semiconductor device, and then based on that simulates SEU in SOI and strained silicon devices with ISE-TCAD. Charge funneling effect has been verified, and several approaches to determine the charge collection mechanism have been developed. The results indicate that bipolar amplification effect dominates the charge collection in deep sub-micrometer devices. The effect of different parameters of device and particle on SEU is analyzed, and emphasis is placed on the simulation of bipolar amplification effect in SOI device, drawing the conclusion that bipolar gain of SOI device decreases with the increase of LET. The simulation of globally tensile strained silicon MOS device has not shown better SEU characteristics. Fully depleted SOI device has the best SEU performance, compared with bulk silicon and strained silicon MOS devices...