Memory Test Method For Total Dose Radiation

Memory is widely used in satellites, aerospace and other radioactive occasion. Studies have shown that irradiation of such memory device parameter degradation is one of main factors reduce the stability, in order to testing the memory effects of radiation damage, there is an urgent need to introduce a total dose of scientific and reasonable method.The content of this thesis was organized as follows. First, introduced the research background, current situation, problems to be solved. Second, SiO2 dielectric material from the MOS device most commonly used starting, researching the SiO2 dielectric materials effect and mechanism of radiation damage. From the structure and application of MOS pipe, the study of the radiation induced defects in MOS circuits and MOS circuit characteristics of surface physics, MOS device of the radiation degradation of electrical parameters and the microscopic mechanism of radiation damage. Third, through in-depth investigation and analysis of domestic and total dose radiation test of the memory state of research results, to obtain first-hand experimental data from which to determine the memory mode, test parameters, the different experimental conditions such as radiation dose rate law, while combined with the memory process technology, the mechanism of the type and mode of analysis, summed up a variety of operating modes, different dose rate irradiation on the impact of test results, high temperature annealing on the impact of total dose effect test. Fourth, the design of radiation testing, designed for memory testing procedures by radiation, temperature validation test procedures for accelerated annealing test results on the steady state of total dose. Finally, a brief summary of the research paper, and according to the purpose of the different memory applications, memory is the total dose of the three proposed test methods and procedures.This research analyzes a large number of valuable data on radiation test technology for future implementation of the work laid the foundation for China's large scale integrated circuit memory technology to provide total dose effect test theory, is very meaningful.