The Fundamental Research Of Top-emitting Organic Light-emitting Devices

Organic light-emitting devices (OLEDs) had been attracting much attention for their potential used in flat display panel. Since Tang first reported on OLEDS with high luminance and low turn on voltage, OLEDs had developed rapidly on materials and structures. And now, OLEDs are on the way to industrialization. Top-emitting organic light-emitting devices (TOLEDs) based on silicon now are being a focus in the filed of OLED, since they are capable of achieving monolithic integration of an OLED displays on a silicon chip, fabricating OLED displays for higher display quality yet without sacrificing aperture ratios of pixels and suitable for making microdisplay on silicon. This paper is focus on how to make a TOLED based on silicon with high brightness and efficiency at low voltage through reasonable design of device structures.The high reflectivity of bottom anode is essential for achieving high efficiency in TOLED based on silicon. Although Ag has highest reflectivity among metals, it is not an ideal anode for TOLED, because of its low work function (-4.3eV). However, Ag2O, reported as P-type semiconductor, whose energy level is matches with the HOMO level of NPB has the band gap of 1.3eV, and the ionization potential of -5.3eV. UV-ozone treatment is a simple way to induce thin Ag2O film on Ag surface. The luminance of the device at 9V is 16310cd/m2,The highest efficiency is 5.2cd/A at 7V. The performance of the device is superior to that of reported bottom emitting deviceThe microcavity exits in TOLED because the emitting layer of device is located between two metal mirrors with certain...