Parameter Measurement And Essential Materials Research Of Spintronic Devices

With the advancement of material growing process and mask graphics process technology, scientists are trying to design a"spintronic device"which is made up of spin carriers and magnetic materials ,and which is considerd to be one of the next generation integrated chip technology taking place of microelectronics.After years` research , a new cross- subject which is named after"spintronics"is formed.It is important to develop a spin device having the abilities of amplification , switch and memory, also making use of existing semiconductor technology would be better. Since promoting the idea of SpinFET ,"semiconductor spintronics device"became a new direction of the studies, that contains four inferior aims : spin injection ,spin transportation,spin control and spin detection in semiconductor.Spin injection and spin detection are the key aspects to develop semicondutor spintronics device.In the paper, the basic spin concepts,main physics phenomenons, mechanisms and experiments are discussed firstly.And then bring forward a serial of spin detection means.Finally ,study the process of magnetic material growing and the characteristic of dulited magnetic semiconductor based on GaN.Spin polarization rate, spin relaxation time and spin diffusion length are the essential parameters of spintronic device. There are two kinds of detection means , that are electrics and optics ones."Spin LED detection"and"Saturation absorption measurements in quantum well"are studied in this paper.Spin magnetic materials are studied to find a basis for the growing process and the characteristic of dulited magnetic semiconductor based on GaN.