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Organic Field Effect Transistor And Near-Infrared Luminescent Device Manufacture

Posted on:2008-11-09Degree:MasterType:Thesis
Country:ChinaCandidate:D M JiFull Text:PDF
GTID:2178360212997010Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Organic semiconductor materials have good properties such as low cost, light weight, innocuity, cleanness, structural flexibility, portability and low temperature processing, which fill in gaps in many areas of inorganic semiconductor materials.Organic semiconductor materials mainly include small molecular organic materials and polymer organic materials. Phthalocyanine is one important kind of small molecular organic optoelectronic functional material. many promising applications of phthalocyanines have emerged recently, such as thin film transistors, light emitting diode, photovoltaic batteries, photoconductive materials, chemical transducer, laser recording medium, nonlinear optics, and biomedicine for its notable semiconductor properties and optoelectronic properties. More than 70,000 articles of phthalocyanines have been reported in only half a century. So much research was focused on phthalocyanines, which was more incomparable than any other compounds.During the last twenty years, great developments have been made on the study of organic thin film field effect transistors (OFETs) that have been applied in active display-driven, large-scale integrated circuits, sensors, and many other areas. But most devices with high mobility are obtained based on inorganic insulation layer materials such as SiO2, which increases the device cost and loss the cheap advantage of organic materials. At the same time, chaps appear on the surface for the interior stress at a high temperature anneal because of the different thermal expansion coefficient between silicon and SiO2. If use the cheap spin-coated polymer thin films, the problem of chaps can be solved and the technologic difficulties can be simplify greatly. Unfortunately, there are hardly any high mobilities obtained from devices based on the familiar polymer insulation layer such as PMMA, teflon, nylon etc.A new copolymer of methyl methacrylate and epoxypropyl methacrylate (PMMA-GMA) is used to fabricate a gate insulation layer with a simple spin-coating thin-film processing. After CuPc was purified by the sublimation-coagulation method, CuPc film was deposited by vacuum thermal evaporation to fabricate an active layer. These devices with a simple top contact structure presented good electrical performances of p-type enhancement mode field effect transistor. When the active layer thickness was 30nm, the performances of OFET based CuPc become the best. After anneal, the saturated currents and the mobilities increased and the threshold voltage decreased, which improved the device performance significantly. It decreased the sphere of electronic cloud overlap density, which was not benefit to the transmission of the carries. It was full proof that PMMA-GMA was a competitive candidate as an excellent gate insulation layer to low the cost and technical difficulty. This improved the device performance and provided a wider choice to fabricate all-organic flexible field effect transistors. we have synthesized a new phthalocyanine . The molecular structure was characterized and analyzed by mass spectra (MS), nuclear magnetic resonance (1H NMR), UV-Vis absorption spectrum, and element analysis. All of these data verify the new molucular structure exactly and we study its optics character. This new material is diffluent with organic flux. We can use spin coating method to form symmetrical film. The base of organic electronics is high-powered material. In order to meet the need of manufacture , we must exploit novel materials .incessantly. Which can drive organic electronics development and progress.By the photoelectric research of this material, we find it exist near-infrared optical activity. Its characteristic spectrum with a band near 0.88μm which coincided with its PL spectrum in the sublimed films.. We use the material synthesized by ourselves as guest interlard host materials and facture electroluminescent near-infrared device. We study the relationship of emission intensity in different concentrations. Luminescence mechanism have been researched elementary .Because this material own well solubility and is easy form film. We can make device by vapor deposition in high vacuum and spin coating. Which predigest got-up process and low the cost. Subsequently, we curried out the investigation of infrared EL devices based on this material. Multilayer OLEDs were fabricated and0.88μm EL observed. Then the quantum efficiency and device performance were improved by purifying molecular materials, improving thin-film properties and optimizing the device structure. This result open a new way to realized organic infrared emitting and provide cheap resolution for future fiber communication to adopt all organic device...
Keywords/Search Tags:Near-Infrared
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