Preparation Of Semiconductor Sulfide Pigment With Low-emissivity And The Mechanism Study

With the development of the infrared detective technique, the infrared stealthy materials had quickly developed. As one kind of the stealthy materials, the coating with low-emissivity became very important as well. Pigment was the main component of coatings, so it was of great significance to study the effect factors and influence mechanism on the low- emissivity pigment.In this dissertation, semiconductor sufide pigments were prepared by Ar atmosphere solid phase reaction through the orthogonal test. Then further experiment was made with the changed reagents and the technics parameters were optimized as well. The structure, composition and morphology of the particles prepared were characterized by X-ray diffraction (XRD),energy dispersive spectrum(EDS) and scanning electron microscope(SEM). The infrared emissivity of the pigments during 8~14μm and 3～5μm wave band was measured by IR-2 infrared emissometer.The main results and conclusions are shown as follows:1. The the heat treatment temperature and CdS/ZnS ratio played an important role in the emissivity. The infrared emissivity decreased from 0.98 to 0.76, when the heat treatment temperature increased. The emissivity reduced with the decreasing of the content of Cd.2. With the most optimized technics paragmeters such as composition and heat treatment temperature, the value of the infrared emissivity at the 8～14μm wave band was decreased to 0.6, and value at 3～5μm was reduced to 0.1. The relationship between infrared emissivity and heat treatment temperature was consistent with the previous result. After doping, the values of the infrared emissivity at 8～14μm and 3～5μm wave band firstly decreased then increased with the heat treatment temperature increased. And there was a minimum value at 900℃. Comparing with the two methods, we could find that the pigment which was made by the second method had a better stealthy properties. In addition, the infrared emissivity of CdxZn1-xS was lower than that of CdS or ZnS , which was indicated from the comparing experiment.3. The value of the infrared emissivity at 3～5μm wave band was far less than that of the 8～14μm, and the absorption peak had moved when K+ was doped.4. In the meanwhile, the infrared emissivity was affect by the conductivity as well. With the increasing of the heat treatment temperature, the carrier concentration increased and the mobility reduced which played an important role. When under a certain heat treatment temperature, the emissivity increased as adding of the content of the doped K+. The infrared emissivity had a linear dependence on conductivity, and the carrier concentration holded a dominant role.