Study Of Water Mark Issue In Semiconductor Manufacture WET Processe

In IC manufacture WET clean process, Watermark as a kind of general defect,It will impact the wafer yield,Especially on the process of FEOL. Experiment on clean process before WSix poly deposition,That will remove native oxide in chip gate manufacture. Study watermark defect that produced in this process step. Through inspect mass defects that reviewed by electronic scanner. Analyse the defect ingredient, Summary the watermark defect characteristic.Get a method to judge the defect.Continue to finish chip process step,Inspect the changing of water mark defect on behind process,The effect to behind process and production yield that water mark defect caused. And search a effective rework method to remove watermark defect by the result of the defect ingredient analysis. Study the hydrophile character of wafer surface, and the hydrophile character of wafer surface after processed by different chemical treatment. Study the relation between hydrophile character of wafer surface to watermark defect on dryer that application widely. To improve the watermark defect through fine tune correlated parameter of the dryer.