Development Of RF Amplifier For 1.9-2.0GHz Band

In modern wireless communication system RF amplifiers on the front-end critically influence the performance of system, and they are widely applied in the Radar, wireless communications, navigation, satellite communications system.We aim at designing and implementing a RF amplifier which works at 1.9-2.0GHz band in this background. In the research, we combine two amplifiers together, use ADS to simulate the bias and matching network, finally, we get a well-pleasing result. Considering some important factors, we prove the final circuit diagram. At last, we test and optimize the two-stage circuit.The GaAs FET devices are widely used in the design of RF amplifiers for the characteristics of its low noise, high efficiency and good linearity. We discuss the model of active device in this paper, analyze the amplifier's gain and stability by using the S parameter, and point out the impedance matching network and bias network implement method, several major RF amplifier design methods is summarized. There are two stage amplifiers in our design: the drive stage amplifier and the power stage amplifier. We simulate the circuit with the Agilent ADS, after selecting the most suitable topology structure of circuit,we simulate the biasing circuit,input and output matching circuit. Through the method of the small signals parameters and the nonlinear designing method, we design and simulate the drive stage and power stage amplifier, also we test the results. At last, we analyze the deficiency of the circuit and draw a summary.