The Fabrication And Circuit Simulation Of Real Space Transfer Transistor

The Real Space Transfer Transistor is one of new N style dynistor. It has the high frequency, high velocity, controlled and predigest the circuit complication. In this paper, the real space transfer transistor ofδ-doped GaAs/InGaAs gated dual-channel structure has been designed and fabricated successfully, which has been grown on GaAs substrate by molecular beam epitaxy. The standard photolithography and lift-off techniques have been employed for device fabrication. It has the standard"Λ"shape negative resistance I-V characteristics as well as a level and smooth valley region that the conventional negative differential resistance device has ever shown.The thesis introduced the design idea, materials structure detailedly, the fabrication ofδ-doped GaAs/InGaAs gated dual-channel structure RSTT has been explained in detail and the I-V characteristics have been measured. The relationship of parameters of materials structure and the parameters of negative differential resistance of RSTT also has been discussed. At the same time, the thesis also introduced the circuit simulation of RSTT, including the design idea of circuit simulation and the questions. And viewing the research about this kind of device.The work of this thesis has been shown:The pseudomorphicδ-doped GaAs/InGaAs epitaxy structure of RSTT has been grown on GaAs substrate by MBE successfully, taking account of the operation of earlier real space transfer transistor and the dual-channel idea of velocity modulation transistor. Two categories of RSTT have been grown with differentδ-doped time in orderly. Both two categories have two kinds material structures, which are differed to each other by the thick of the cap film (d2=50nm, d2=30nm).The mesa isolation of RSTT using wet etching is discussed in particular. The temperature and time of sintering are given on the foundation of experiment repeatedly. The evaporation and sputter are selected to form Schottky contact and Ohmic contact.At the circuit simulation, in the thesis it introduced the simulation way aboutδ-doped GaAs/InGaAs epitaxy structure of RSTT and set up reasonable circuit model and improve it. At the same time, doing some contrasts with the real circuit testing results.