Design And Modeling Of A Novel IGBT

Combining the best attributes of both MOSFET and BJT, the IGBT (Insulated Gate Bipolar Transistor) shows many advantages, such as voltage driving, high switching speed, low saturation voltage, undertaking high voltage and high current. This semiconductor power device has found abroad applications, and gradually takes the place of GTR and MOSFET. At present the high performance IGBT is needed urgently. However, most IGBT come from import because no unaided manufacturer in our country can be found so far. As a result, nowadays many researchers have turned to designing and developing new advanced IGBT devices.In this thesis, we firstly introduce structure and principle of the device, and then briefly address simulation of the semiconductor device. Based on CSTBT, a new structure of IGBT has been proposed, which is called FH-TIGBT (Full Hole-barrier Layer Trench IGBT). With a layer of type N under the trench gate, this new device costs lower saturation voltage, but owns stronger ability of carrying out short circuits comparing to CSTBT. Besides, it contains all other advantages of CSTBT. The process simulation of the novel device has been implemented in this work, which verifies advantages of the new device.We build an equivalent circuit model of FH-TIGBT. Without IGBT model in SPICE, this equivalent circuit model can be used in the circuit design expediently. The implementation contains device characters simulated, effectual parameters extracted and equivalent circuit model refined. We verified that the equivalent circuit model matches the characters of the new device perfectly. From the simulation results, the advantages of this novel semiconductor device can be seen obviously.