Study Of Universal Memory Single Event Effects Test System

General semiconductor memory SEU, SEL test system was developed in this paper, semiconductor memory SRAM,EEPROM,FLASH are the three kinds of test objects which China's space research more commonly used. System uses virtual technology and Lab VIEW graphical programming language to design; by analyzing the intrinsic relationship of the data before and after up-set presents a determination based on one-way data flow algorithm; because the NI PXI-6541, PXI-6602 function channels can be re-defined, the system achieves the memory address of channels, data channels, any of the test area and control channels to be re-defined, thus expanding the system of testing capacity and test type.The Functions of this system are to test memory storage unit bit state changes and memory changes in operating current, on-line record of test results, automatic beam shutter switch, auto-switching power supply chip, automatically select the test object , automatically generating for special chip sampled waveform and produced waveforms, special function pin can be re-defined; this system provides two kinds of test modes: adap mode and non-adapted model; offers two latch approach: delayed mode and step-down mode.This System was checked on the single event experiments on Beijing HI-13 tandem accelerator using 35Cl10,14+ particle to irradiate TC58256FT/DC256M (32M×8bits) EEPROM and Atmel's AM29F010B-70PC1M (128kx8bits) FLASH. The measured SEU cross-section is 1.42×10-7(1±10%)cm2,according to the results of foreign literature, this verified that the system is credible; the research results could provide important reference materials for on-board electronic systems of the operational life of the assessment and anti-radiation-hardened design.