Low-Voltage Reference Source Design And Its Application In The LDO

As IC process geometries continue to shrink,the circuit operating voltage is correspondingly reduced.0.18μm stand CMOS IC process voltage of 1.8V,while the 90nm process,operating voltage is reduced to 1V.In this context,based on CMOS technology under a variety of low-voltage analog circuits has been widespread concern.Voltage reference source as an important basic modules are widely used in a variety of analog circuits and systems,especially in low voltage reference has become the technology of integrated circuits in a hot area of research.This design and simulation of a modified low-voltage voltage reference source,this paper carried out the traditional circuit analysis and verification,come good or bad performance of bias current Low-voltage reference source as a whole will have a significant impact,requiring improvements to the bias current.Secondly,the use of working in subthreshold region MOS control gate-source voltage temperature characteristics,based on the original circuit,the circuit has been improved to enhance performance of the circuit.The chartered 0.35μm process,through the Hspice circuit simulation achieved.Compared with the original circuit,the simulation showed that the output voltage fluctuation(1.3V-3.3V)from 2.832mV raised to 0.856mV,changes in temperature(-25℃-125℃) from 83.3ppm/℃increased to 51.3ppm/℃, and in the low frequencies with high power supply rejection ration(83dB@1kHz).Finally,this article will improve after the low-voltage LDO voltage reference source used in the system,as well as other sub-modules(including the error amplifier module,over temperature protection module,undervoltage lockout module) for the design and simulation,after which the whole is given LDO circuit simulation results showed that,LDO system stability.