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C Band CMOS Low Noise Amplifier

Posted on:2011-10-14Degree:MasterType:Thesis
Country:ChinaCandidate:Y K ZhangFull Text:PDF
GTID:2178360308453418Subject:RFIC
Abstract/Summary:PDF Full Text Request
The purpose of this thesis is aiming to design a C-Band CMOS LNA for Point to Point (PTP) communication. The LNA is working from 7.1GHz to 7.9GHz. Based on TSMC 0.18um RF CMOS Model and theory of microwave circuit, a 7GHz CMOS LNA has been proposed. The proposed circuit was designed and simulated by using simulation tool, ADS2006A and the model of CMOS RF FET, capacitance and inductance provided by TSMC.According to the simulation result, gain of 20dB, noise figure less than 2.5dB, and OIP3 of 13dBm can be achieved by the LNA with 1.8V supply voltage at center frequency 7.5GHz.Further more, the current consumption is only 12mA.
Keywords/Search Tags:CMOS, LNA, Noise Figure, Stability
PDF Full Text Request
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